Revolutionary Memory
Highly Stackable 3D Ferroelectric NAND Devices : Beyond the Charge Trap Based Memory
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectric NAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4V program/erase window. We also reported cycling and retention characteristics.