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Revolutionary Memory

Highly Stackable 3D Ferroelectric NAND Devices : Beyond the Charge Trap Based Memory

in IMW 2022
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectric NAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4V program/erase window. We also reported cycling and retention characteristics.

DOI

https://doi.org/10.1109/IMW52921.2022.9779278
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