For the first time, we demonstrated the ultra-high density 3D ferroelectric NAND (FeNAND) arrays for analog computation of hyperscale AI models. Interface trap density of gate stacks was controlled to induce multi-level weight conductance states (> 256 levels/cell) of 3D FeNAND cells. Then, we confirmed the high accuracy (87.8%) of analog multiply-accumulate operations in 3D FeNAND arrays. Our 3D FeNAND arrays improved A-CiM cell density by a factor of 4,000x than 2D arrays, thereby they can provide 1,000x higher compute efficiency (TOPS/mm2).