Here, we demonstrate hybrid ferroelectric tunnel junctions (H-FTJs) that combine ferroelectric and resistive switching for analog computation in memory. The key of H-FTJs lies in the modulation of the effective tunneling thickness by the control of oxygen vacancy-based unconnected filaments in HfZrO2. The H-FTJs exhibited high on-state conductance (1.6×103S/cm2) and on/off ratios (32,000) compared to recent studies on HfZrO2-based FTJs. We also fully integrated one-transistor-one-(H-FTJ) cross-bar arrays, and confirmed their analog multiply-accumulate operations (accuracy 91.9%) with high energy efficiency (224.4 TOPS/W) for inference tasks.