Frontier Analysis Technology

Our frontier research in semiconductor characterization aims to expand the boundaries of semiconductor analysis by revealing structural and material information beyond the capabilities of conventional techniques. By developing state-of-the-art characterization techniques, we seek to uncover previously inaccessible information and deepen our understanding of semiconductor materials and devices. These efforts provide new perspectives for addressing increasingly demanding challenges in semiconductor research and development.

Atomic Electron Tomography

As memory devices evolve toward higher-density integration and increasingly complex three-dimensional (3D) structures, nanoscale features can become difficult to interpret unambiguously in conventional two-dimensional imaging due to overlapping information along the viewing direction.

Atomic Electron Tomography (AET) enables 3D characterization by reconstructing structures from a series of TEM images acquired at different tilt angles.

• Atomic-Scale 3D Reconstruction:
  We are developing advanced reconstruction approaches for 3D characterization at the atomic scale. These developments aim to reveal structural complexity and local variations in semiconductor devices.
• Correlative 3D Analysis:
  We are exploring correlative 3D analysis that combines complementary structural and chemical information obtained from advanced characterization techniques. This approach provides a broader perspective on complex semiconductor materials.