Next Generation Mask Technology

As traditional optical lithography reaches its physical limits, next-generation mask technology utilizing Extreme Ultraviolet (EUV) light has become essential. This shift is necessary because EUV light, with its extremely short wavelength, is absorbed by standard glass and cannot transmit through it. Instead, EUV masks employ specialized multi-layer coatings designed to reflect light precisely onto the wafer.

Furthermore, to address pattern distortion caused by the “Mask 3D effect” — a shadowing phenomenon resulting from the oblique angle of light incidence — advanced precision control technologies are being developed to pre-correct patterns. These next-generation mask innovations are the cornerstone for realizing sub-2nm semiconductor processes, paving the way for chips that are smaller, faster, and more power-efficient. Ultimately, the evolution of mask technology marks the starting point for the enhanced performance of future electronic devices.

EUV Reflective Mask

The evolution of lithography light sources—from i-Line (365㎚) to ArF (193㎚)—has culminated in Extreme Ultraviolet (EUV) lithography at 13.5㎚. Due to the extremely short wavelength of EUV light, which is absorbed by most materials including glass, traditional transmissive masks are ineffective. Instead, we utilize advanced Reflective Masks composed of sophisticated Bragg reflectors (Mo/Si multilayers).

A key challenge in EUV lithography is the Mask 3D Effect, where oblique light incidence creates shadowing effects, causing pattern placement errors and critical dimension (CD) variations. To mitigate this, we are pioneering:

• Absorber Stack Optimization:
  Exploring advanced mask structures to enhance EUV process productivity and imaging quality.
• Advanced Material Research:
  Developing novel absorber materials tailored for High-NA EUV systems to ensure pattern accuracy at the 2nm node and beyond.