[Preview] Preview IEDM 2023
SKHynix R&D RTC will present a paper at the 2023 International Electron Devices Meeting (IEDM2023) (Neuromorphic Session 23-5), which will be held in San Francisco, California, USA from December 9 to 13, 2023. In the paper, we will demonstrate the recent achievements of RTC on Resistive Synaptic Cell (RSC)-based ACiM Platform research. We hope to have good discussion with IEDM communities regarding this topic. Please make sure to reach out to us if you are in IEDM.
A Holistic Methodology toward Large-scale AI Implementation using Realistic ReRAM based ACiM from Cell to Architecture.
There are many studies aimed at improving the power efficiency of AI accelerators by implementing computing-in-memory using the non-volatile analogue characteristics of various emerging memory devices. In this study, as a leading group in emerging memory research, we present directions from an overall perspective, including device properties, device operation methods, large array configuration, and circuit compensation methods, to improve problems of ACiM caused by defective RSC devices.

![[Summary] A Memristor-based In-Memory Computing SoC with Efficient Depthwise Convolution](https://mis-prod-koce-research-user-cdn-01-blob-ep.azureedge.net/web/blog/20260806/thumb_sEVmfv3K.20260806085519833.jpg)
![[Insights] Evolving Role of Emerging Memories in Next-Generation Computing](https://mis-prod-koce-research-user-cdn-01-blob-ep.azureedge.net/web/blog/20260806/thumb_NgJoNLYn.20260806080458980.jpg)
![[Summary] Electrical Characteristics of the 4F2 Vertical Gate (VG) DRAM integrated with Bit-Line Shielding (BLS) and Back Gate (BG) Transistor](https://mis-prod-koce-research-user-cdn-01-blob-ep.azureedge.net/web/blog/20260806/thumb_DOUurl5m.20260806080624234.png)