Global RTC (Revolutionary Technology Center) in SK hynix Inc. R&D will present two technical papers at the 2024 International Electron Devices Meeting (IEDM2024), being held from Dec. 7-11 2024, in San Francisco, CA. Please make sure to reach out to us if you are in IEDM. We look forward to engaging in meaningful discussions with you.

“Analog Computation in Ultra-High Density 3D FeNAND for TB-level Hyperscale AI Models” by Jae-Gil Lee and Won-Tae Koo. For the first time, we demonstrated the ultra-high density 3D ferroelectric NAND (FeNAND) arrays for analog computation of hyperscale AI models. We optimized the gate stacks of 3D FeNAND cells by interface engineering, improving the analog properties with more than 256-conductance-weight levels/cell. The developed 3D FeNAND arrays performed stable MAC operations with high accuracy (~88%) and exhibited ultra-high compute efficiency.

“Reliable memory operation with low read disturb rate in the world smallest 1Selector-1MTJ cell for 64 Gb cross-point MRAM” by Hisanori Aikawa. (Kioxia and SK hynix Inc. joint development project) For the first time, we demonstrate reliable 1selector-1 MTJ (1S1M) cell read/write operation with low read disturb rate of <1E-6 in 64 Gb cross-point memory. To achieve this, the novel read scheme with low cap mode is a key for reducing read disturb. Thus, we believe our work paves the way to high-density, high performance, and highly reliable MRAM for SCM application.