SK hynix R&D will present two papers at 2022 International Electric Devices Meeting (IEDM2022) being held from Dec. 3-7 2022, in San Francisco, CA. In the papers, we will show the demonstration of recent RTC’s achievement in the area of emerging memories:  Selector only memory (SOM) and highly scaled MRAM-based cross-point memory architectures. Be sure to take a look at the most-viewed papers on the RTC website. Read more

In addition, SK hynix is happy to participate in a career luncheon in 2022 IEDM. Myung-Hee Na, SK hynix, will be one of speakers in this session to talk about personal experiences in the context of career growth followed by QAs from the audience.

“First demonstration of full integration and characterization of 4F2 1S1M cells with 45 nm of pitch and 20 nm of MTJ size“, by S. M. Seo

In this paper, the authors report for the first time the performance of 1 selector-1 MTJ (1S1M) cells integrated in 45 nm of pitch and 20nm of MTJ CD on CMOS circuit using As-doped SiO2 selector. This paper shows the potential of the cross-point MRAM for the application of high density and low-cost memory. To see more

“Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link”, by S. Hong 

We demonstrate an array operation of 20 nm self-selecting memory (SSM) for the first time. SSM shows extremely high cell performance, great reliability, and promising scalability below tech nodes of 1z nm. The innovation of material engineering enables memory-selector duality, which can reduce the aspect ratio (AR) and consequently lead to better scalability. To see more