[Preview] Global RTC in VLSI 2024
Global RTC (Revolutionary Technology Center) in SK Hynix Inc. R&D will present a paper at the 2024 IEEE Symposium on VLSI Technology & Circuits (VLSI 2024) (Session T1.5) in Honolulu, Hawaii, USA from June 16 to 20, 2024.
The paper is titled "First demonstration of the fully integrated 16nm Half Pitch Selector Only Memory (SOM) for Emerging CXL Memory" and was selected for the Technical Highlights session. We are leading the global SOM technology leadership by demonstrating the scalability and performance of 16 nm half-pitch SOM for the first time at VLSI 2024, following the industry's first announcement of 20 nm SOM at IEDM 2022. This study demonstrates the new direction of cross-point memory scaling and presents its potential to be a promising solution for emerging CXL memory module (CMM).

![[Summary] A Memristor-based In-Memory Computing SoC with Efficient Depthwise Convolution](https://mis-prod-koce-research-user-cdn-01-blob-ep.azureedge.net/web/blog/20260806/thumb_sEVmfv3K.20260806085519833.jpg)
![[Insights] Evolving Role of Emerging Memories in Next-Generation Computing](https://mis-prod-koce-research-user-cdn-01-blob-ep.azureedge.net/web/blog/20260806/thumb_NgJoNLYn.20260806080458980.jpg)
![[Summary] Electrical Characteristics of the 4F2 Vertical Gate (VG) DRAM integrated with Bit-Line Shielding (BLS) and Back Gate (BG) Transistor](https://mis-prod-koce-research-user-cdn-01-blob-ep.azureedge.net/web/blog/20260806/thumb_DOUurl5m.20260806080624234.png)